Changes in the electronic structure of the Si surface as a result of ion implantation

The composition, structure, and physicochemical properties of the surface near-surface layers silicon doped with low-energy (E 0 <5 keV) Ba + O 2 ions have been studied using a set photoelectron secondary electron spectroscopy methods. It has established that in process ion implantation, chemical bonds are formed between atoms alloying element matrix, width energy bands density electronic states change.